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| QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy mounting with other components on a common heatsink. QIQ0630003 Low side Chopper IGBT Module 300 Amperes / 600 Volts Features: Isolated Mounting Low Drive Requirement Low VCE(sat) Super Fast Diode (2) H Series 150A 600V Chips per IGBT Switch (6) H Series 100A 600V Chips per Diode Metal Baseplate Low Thermal Impedance C1 C2/E1 SE2 G2 SE1 G1 NC NC E2 Note: This chopper module is intended to be used in circuits in which no positive voltage ever appears from E2 to C2E1 Applications: Choppers Welding Power Supplies Dim A B C D E F G H J K L M N P Q R S Inches 3.70 3.150 0.01 1.89 1.18 Max. 0.90 0.83 0.71 0.67 0.63 0.51 0.47 0.30 0.28 0.256 Dia. 0.26 M5 Metric 0.16 Millimeters 94.0 80.0 0.25 48.0 30.0 Max 23.0 21.2 18.0 17.0 16.0 13.0 12.0 7.5 7.0 Dia. 6.5 6.5 M5 4.0 Preliminary Page 1 03/06/2008 QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Maximum Ratings, Tj=25C unless otherwise specified Ratings Collector Emitter Voltage Gate Emitter Voltage Collector Current Peak Collector Current Diode Average Forward Current Diode Forward Surge Current Diode I t for Fusing for One Cycle t=8.3mS Power Dissipation Junction Temperature Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation 2 Symbol VCES VGES IC ICM 180 Conduction, TC=78C IFM IFM It Pd Tstg VRMS 2 Units 600 20 300 600 300 3600 54000 1100 -40 to 125 17 26 270 2000 Volts Volts Amperes Amperes Amperes Amperes A sec Watts C In-lb In-lb Grams Volts 2 Static Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Collector Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCE=VCES VGE=0V VGE=VGES VCE=0V IC=30mA, VCE=10V IC=300A, VGE=15V IC=300A, VGE=15V, Tj=125C Total Gate Charge Diode Forward Voltage QG VFM VCC=300V, IC=300A, VGS=15V IF=600A IF=300A IF=200A Min 4.5 Typ 6.0 2.1 2.15 900 2.0 1.7 1.3 Max 1.0 0.5 7.5 2.8 2.8 2.2 Units mA A Volts Volts Volts nC Volts Volts Volts Dynamic Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn off delay time Fall Time Diode Reverse Recovery Time Diode reverse Recovery Charge Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr Test Conditions VGE=0V VCE=10V f=1MHz VCC=300V IC=300A VGE1=VGE2=15V RG=2.1 IF=600A diF/dt=-1200A/S Min Typ 1.62 Max 30 10.5 6 350 600 350 300 110 Units nF nF nF nS nS nS nS nS C Thermal and Mechanical Characteristics, Tj=25C unless otherwise specified Characteristic Symbol Test Conditions Min Typ Max Units C/W C/W C/W Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance RJC RJC RCF Per IGBT Per Diode Per Module - 0.11 0.12 - TBD TBD 0.065 Preliminary Page 2 03/06/2008 |
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